Low-temperature high p-type doping in polycrystalline semiconductors

Low-temperature p-type doping in semiconductors is crucial for advanced electronic devices, particularly in areas where traditional high-temperature processes are not feasible. In CMOS image sensors, low-temperature doping would enable the integration of new materials and functionalities into conventional silicon-based technology through CMOS-compatible processes. This project focuses on low-temperature aluminum doping in poly- and single-crystalline semiconductor layers, with particular attention to doping distribution after multiple process steps. This research aims to enhance the understanding of low-temperature doping processes and optimize fabrication techniques for improved semiconductor performance.

You will work under the supervision of two PhD students and will be part of the IS group.

Assignment

In this thesis project, you will:

1. Review literature of state-of-the-art low-temperature doping in layer exchanged structures.
2. Fabricate test structures to study the effect of different process parameters.
3. Develop simple methods for characterizing doping levels.

Requirements

Recommended Background (but not all is required - you can learn in the project!) :

• Semiconductor physics
• Material science
• Cleanroom fabrication
• Electrical benchtop testing
• Excitement about unusual physical phenomena in semiconductors!

Contact

Last modified: 2024-09-03