Investigation of the working principle of an advanced Si-based UV sensor

This project will be part of an ongoing research effort to study the mechanisms governing the working principles of a novel semiconductor heterojunction. The subject of this topic has already found use in different applications, most notably as a photodetector for UV radiation.

The main goal of the project is to broaden the understanding of the physics governing the device. The goal will be achieved through a series of experiments designed to explore its properties and to test the applicable theoretical and empirical models: (1) The Schottky-Mott model, (2) δ-doped pn-junction, (3) ultrathin p-type dopant layer heterojunction. The knowledge obtained will be of a fundamental nature and could lead to the invention of new devices.

The MSc student will join a multi-disciplinary team in cooperation with industrial partners. The team is primarily focused on the development of high-performance measurement instrumentation and smart sensor systems.

Assignment

During this project the MSc student will work on the design, creation and characterization process of semiconductor devices.
For hands-on experience processing the devices, the MSc student will undergo a training course at the Else Kooi Laboratory.
There will also be opportunities to learn and apply a first-principles computational method to simulate the interfaces at an atomic scale.

Requirements

A basic understanding of hetero- and pn-junction theory is strongly recommended.

Contact

Last modified: 2024-04-30